r.a.p.992304-chiu ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) descri bed herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting t he factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1920CD35 35 watts, 25 volts, class ab personal 1930 ? 1990 mhz general description the 1920CD35 is a common emitter transistor capable of providing 35 watts of class ab, rf output power over the band 1930-1990 mhz. this transistor is specifically designed for personal communications base station amplifier applications. it includes input prematching and utilizes gold metalization and high value emitter ballasting to provide high reliability and supreme ruggedness. case outline 55ar style 2 common emitter absolute maximum ratings maximum power dissipation @ 25 c 120 watts maximum voltage and current collector to emitter voltage (bv ces ) 55 v collector to emitter voltage (lc ceo ) 27 v collector to emitter voltage (bv cer ) 50 v emitter to base voltage (bv ebo ) 3.5 v collector current (i c ) 14.0 amps maximum temperatures storage temperature -65 to +200 c operating junction temperature +230 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power out f = 1990 mhz 35 w p in power input v cc = 25 volts 6.0 w p g power gain icq = 250 mamps 8.0 8.5 db c collector efficiency as above 43 % vswr 1 load mismatch tolerance 3:1 functional characteristics @ 25 c bv ces collector to emitter breakdown ie = 50 ma 55 v lv ceo collector to emitter breakdown ic = 50 ma 25 v bv cer collector to emitter breakdown ic = 50ma, re = 10 ohms 50 v bv ebo emitter to base breakdown ie = 10ma 3.5 v i ces collector leakage current vce = 27 v 10 ma h fe dc ? current gain vce = 5v, ic = 1a, 20 100 c ob output capacitance f = 1 mhz, vcb = 28v 28 pf jc 2 thermal resistance tc = 25 o c1.6 c/w initial issue april 1999
1920CD35 zin zcl frequency r jx r jx 1900 4.19 5.14 4.7 -8.28 1930 4.22 4.99 4.56 -8.24 1960 4.17 4.62 4.05 -7.69 1990 3.06 4.23 4.39 -7.38 2000 2.74 4.83 4.42 -7.34 input impedance 1.00 2.00 3.00 4.00 5.00 6.00 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 frequency (mhz) ohms rin xin vcc=25 v icq=250 ma pout=35 w cw collector efficiency vs power out cdma 0 5 10 15 20 25 30 35 20 22 24 26 28 30 32 34 36 38 40 42 power out (dbm) cdma ave efficiency % eff cdma f=1990 mhz vcc=25 v icq=250 ma
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